
Sabrine Ayari is a Professor Researcher at De Vinci Higher Education, Paris La Défense, specializing in Theoretical Physics and Artificial Intelligence for Materials Science. She is also responsible for the HPC and AI program at ESILV. ------------------------------------------------------------------ She is an Associate Researcher at the École Normale Supérieure (ENS), Paris, affiliated with CNRS, where she contributed to the European project EXTREME-IR. ------------------------------------------------------------------ From 2022 to 2024, she served as a Postdoctoral Researcher at ENS under the supervision of Prof. Robson Ferreira, focusing on theoretical modeling of optical and electronic properties of advanced two-dimensional materials. ------------------------------------------------------------------ She received her Ph.D. in Theoretical Physics in 2022, with a specialization in Condensed Matter Physics. Her thesis investigated the optical and dynamic properties of excitons and trions in transition metal dichalcogenides and CdSe nanoplatelets. She collaborated with the Institute of Optics and Atomic Physics at Technische Universität Berlin (TU Berlin), in the group of Prof. Ulrike Woggon, in partnership with Dr. Alexander Achtstein. ------------------------------------------------------------------ Her research interests include condensed matter physics; electronic, vibrational, and transport properties of materials; nonlinear and linear optical processes; and the design of efficient solid-state sources in the far-infrared region. ------------------------------------------------------------------ She has authored and co-authored publications in high-impact journals such as Physical Review Letters, InfoMat, and Nanoscale. She has also presented her research at several international conferences, including the ETSF Young Researchers' Meeting
Gayatri Gayatri; Mehdi Arfaoui; Debashish Das; Tomasz Kazimierczuk; Sabrine Ayari; Natalia Zawadzka; Takashi Taniguchi; Kenji Watanabe; Adam Babi?ski; Saroj K Nayak; Maciej R Molas; Arka Karmakar
Fast interlayer energy transfer from the lower bandgap MoS2 to the higher bandgap WS2 Article de journal
Dans: Npj 2D Materials And Applications, vol. 10, no. 25, 2026.
@article{gayatri_4207,
title = {Fast interlayer energy transfer from the lower bandgap MoS2 to the higher bandgap WS2},
author = {Gayatri Gayatri and Mehdi Arfaoui and Debashish Das and Tomasz Kazimierczuk and Sabrine Ayari and Natalia Zawadzka and Takashi Taniguchi and Kenji Watanabe and Adam Babi?ski and Saroj K Nayak and Maciej R Molas and Arka Karmakar},
url = {https://doi.org/10.1038/s41699-026-00661-w},
year = {2026},
date = {2026-02-01},
journal = {Npj 2D Materials And Applications},
volume = {10},
number = {25},
abstract = {Energy transfer (ET) is a dipole-dipole interaction, mediated by the virtual photon. Traditionally, ET happens from the higher (donor) to lower bandgap (acceptor) material. However, in some rare instances, ET can happen from the lower-to-higher bandgap material, depending on the strong overlap between the acceptor photoluminescence (PL) and the donor absorption spectra. In this work, we report an ET process from the lower bandgap MoS2 to the higher bandgap WS2, due to a near ?resonant' overlap between the MoS2 B and WS2 A excitonic levels. Changing the MoS2 bandgap from direct-to-indirect by increasing the layer number results in a reduced ET rate, evidenced by the quenching of the WS2 PL emission. Our work shows at 300?K, the ET timescale of ~33?fs is faster than the reported thermalization of the MoS2 excitonic intervalley scattering (K???K') time and competing with the ultrafast charge transfer timescale. Thus, allowing us to open a new direction in understanding the competing inter/intralayer processes.},
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tppubtype = {article}
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Martin Mi?ica; Adrien Wright; Sylvain Massabeau; Sabrine Ayari; Enzo Rongione; Mario Oliveira Ribeiro; Sajid Husain; Rahul Sharma; Thibaud Denneulin; Rafak.E Dunin?Borkowski; Juliette Mangeney; Jérôme Tignon; Romain Lebrun; Hanoko Okuno; Olivier Boulle; Alain Marty,; Frédéric Bonell; Francesca Carosella; Henri Ja?rés; Robson Ferreira; Jean?Marie George; Jamet Matthieu; Sukhdeep Dhillon
Terahertz Electronic and Spin Currents in Wafer?Scale Van der Waals Bi 2 Se 3 /WSe 2 Heterostructures and Polymorphs Article de journal
Dans: Advanced Materials, vol. 38, no. 1, p. e06031, 2026.
@article{micica_4074,
title = {Terahertz Electronic and Spin Currents in Wafer?Scale Van der Waals Bi 2 Se 3 /WSe 2 Heterostructures and Polymorphs},
author = {Martin Mi?ica and Adrien Wright and Sylvain Massabeau and Sabrine Ayari and Enzo Rongione and Mario Oliveira Ribeiro and Sajid Husain and Rahul Sharma and Thibaud Denneulin and Rafak.E Dunin?Borkowski and Juliette Mangeney and Jérôme Tignon and Romain Lebrun and Hanoko Okuno and Olivier Boulle and Alain Marty, and Frédéric Bonell and Francesca Carosella and Henri Ja?rés and Robson Ferreira and Jean?Marie George and Jamet Matthieu and Sukhdeep Dhillon},
url = {https://doi.org/10.1002/adma.202506031},
year = {2026},
date = {2026-01-01},
journal = {Advanced Materials},
volume = {38},
number = {1},
pages = {e06031},
abstract = {Van der Waals heterostructures and polymorphs have promised the realization of artificial materials with multiple physical phenomena such as giant optical nonlinearities, spin-to-charge interconversion in spintronics and topological carrier protection, through an infinitely diverse set of 2D quantum materials and their stacking order in a single layered device. However, their exploitation for the terahertz range has been limited with most investigations based around the optical domain, owing to the use of exfoliated material that inherently limits both the dimensions of the materials and the scalability for applications. Here, the combination of terahertz electronic and spin currents is demonstrated through the realization of large area complex crystalline heterostructures of topological insulators, transition metal dichalcogenides (TMDs) and ferromagnets. This is demonstrated through down-conversion of optical beams into coherent terahertz currents, where the terahertz phase permits the decoupling of the physical phenomena, and bringing novel functionalities beyond those achievable in simple homostructures. In particular, the role of different TMD polymorphs (stacking orders - 1T?, 2H, and 3R) is shown with the simple change of one atomic monolayer of the material stack entirely changing the terahertz responses - both electrical and magnetic - of the artificial material. This allows to highlight ultrafast phenomena that combine both the electronic- and spin-based processes in these structures. The importance of the crystal symmetry on the magnetic properties through proximity effects is further demonstrated, showing a nonlinearity of magnetic origin as a result of the 1T? polymorph. As well as control of the terahertz currents through different polymorphs, this scalable integration of a set of highly diverse materials establishes a platform for next-generation 2D heterostructures that integrate photonic, electronic, and spintronic properties into device architectures.},
keywords = {},
pubstate = {published},
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Marin Tharrault; Sabrine Ayari; Mehdi Arfaoui; EVA Desgue; Romaric Le Goff; Pascal Morfin; José Palomo; Michael Rosticher; Sihem Jaziri; Bernard Plaçais; Pierre Legagneux; Francesca Carosella; Christophe Voisin; Robson Ferreira; Emmanuel Baudin
Optical Absorption in Indirect Semiconductor to Semimetal PtSe2 Article de journal
Dans: Physical Review Letters, vol. 134, no. 6, p. 066901, 2025.
@article{tharrault_3598,
title = {Optical Absorption in Indirect Semiconductor to Semimetal PtSe2},
author = {Marin Tharrault and Sabrine Ayari and Mehdi Arfaoui and EVA Desgue and Romaric Le Goff and Pascal Morfin and José Palomo and Michael Rosticher and Sihem Jaziri and Bernard Plaçais and Pierre Legagneux and Francesca Carosella and Christophe Voisin and Robson Ferreira and Emmanuel Baudin},
url = {https://doi.org/10.1103/PhysRevLett.134.066901},
year = {2025},
date = {2025-02-01},
journal = {Physical Review Letters},
volume = {134},
number = {6},
pages = {066901},
abstract = {PtSe2 is a van der Waals material transitioning from an indirect band gap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband (0.8-3.0 eV) optical absorption of high-quality exfoliated crystals and DFT ab initio simulations, we prove instead that the optical absorption arises only from direct transitions. This understanding allows us to shed light on the semiconductor-to-semimetal transition in an emblematic strongly thickness-dependent 2D material, and to explore the effect of stacking and excitons on the optical absorption.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Sabrine Ayari; Mehdi Arfaoui; Marin Tharrault; Francesca Carosella; Sihem Jaziri; Robson Ferreira; Dhillon Sukhdeep; Emmanuel Baudoin
Optical Absorption in Indirect Semiconductor to Semimetal PtSe2 Arises from Direct Transitions Conférence
The 21st ETSF Young Researchers' Meeting, Trieste, Italy, 2025.
@conference{ayari_3786,
title = {Optical Absorption in Indirect Semiconductor to Semimetal PtSe2 Arises from Direct Transitions},
author = {Sabrine Ayari and Mehdi Arfaoui and Marin Tharrault and Francesca Carosella and Sihem Jaziri and Robson Ferreira and Dhillon Sukhdeep and Emmanuel Baudoin},
url = {https://www.cecam.org/workshop-details/yrm-2025-21st-etsf-young-researchers-meeting-1430},
year = {2025},
date = {2025-05-01},
booktitle = {The 21st ETSF Young Researchers' Meeting},
address = {Trieste, Italy},
abstract = {Unlike traditional group-6 transition metal dichalcogenides (TMDs), group-10TMDs such as PtSe2 possess highly tuneable bandgaps, transitioning from an indirect band gap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband (0.8-3.0 eV) optical absorption of high-quality exfoliated crystals and DFT ab initio simulations, we prove instead that the optical absorption arises only from direct transitions. This understanding allows us to shed light on the semiconductor-to-semimetal transition in an emblematic strongly thickness-dependent 2D material, and to explore the effect of stacking and excitons on the optical absorption.},
note = {26/05/2025 au 30/05/2025},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
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